Method for making monolithically integrated signal processing ci

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device

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438 29, 438 34, H01L 2100

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057704724

ABSTRACT:
An optical signal processor is implemented as a monolithically integrated semiconductor structure having optical waveguide devices forming beam splitters, optical amplifiers and optical phase shifters. The monolithic structure photonically controls a phased-array microwave antenna. Phase-locked master and slave lasers generate orthogonal light beams having a difference frequency that corresponds to the microwave carrier frequency of the phased-array antenna. The lasers feed the signal processor, which performs beam splitting, optical amplifying and phase shifting functions. A polarizer and an array of diode detectors convert optical output signals from the signal processor into microwave signals that feed the phased-array antenna. The optical waveguides of the signal processor are fabricated in a single selective epitaxial growth step on a semiconductor substrate.

REFERENCES:
Kato et al. "DFB-LD/Modulator Integrated Light Source by Bandgap Energy Crolled Selective MOVPE." Electron. Letters, vol. 28, pp. 153-154, (1992).
Demeester et al. "Non-planar MOVPE growth using a novel shadow-masking technique." Journal of Crystal Growth, 107, pp. 161-165, (1991).
Zhou et al. "Heavy-and light-hole band crossing in a variable-strain quantum-well heterostructure." Physical Review B, vol. 51, No. 8, pp. 5461-5464, 15 Feb. 1995.
Galeuchet et al. "Selective area MOVPE of GaInAs/InP Heterostructure on masked and nonplanar (100) and (111) substrates." Journal of Crystal Growth, vol. 107, pp. 147-150, (1991).
Aoki et al. "Novel MQW electroabsorption modulator/DFB-laser integrated device grown by selective area MOCVD." proceedings OFC '92/Friday Morning, p. 276, (1992).

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