Method for making monolithic integrated bridge transistor circui

Details Method for making monolithic integrated bridge transistor circui Method for making monolithic integrated bridge transistor circui

1995-06-01

1997-04-22

Niebling, John

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438357, H01L 2265

Patent

active

056228767

ABSTRACT:
A monolithically integrated, transistor bridge circuit of a type suiting power applications, comprises at least one pair of IGBT transistors (M1 , M2) together with vertically-conducting bipolar junction transistors transistors (T1, T2). These IGBT transistors are laterally conducting, having drain terminals (9, 19) formed on the surface of the integrated circuit (1), and through such terminals, they are connected to another pair of transistors (T1, T2) of the bipolar type.

REFERENCES:
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 4866495 (1989-09-01), Kinzer
patent: 4896196 (1990-01-01), Blanchard et al.
patent: 4949142 (1990-08-01), Contiero et al.
patent: 5023678 (1991-06-01), Kinzer
patent: 5023691 (1991-06-01), Hagino
patent: 5055721 (1991-10-01), Majumdar et al.
patent: 5072278 (1991-12-01), Paparo et al.
patent: 5107151 (1992-04-01), Cambier
patent: 5123746 (1992-06-01), Okado
patent: 5231563 (1993-07-01), Jitaru
patent: 5273917 (1993-12-01), Sakurai
patent: 5315497 (1994-05-01), Severinsky
patent: 5317180 (1994-05-01), Hutter et al.
patent: 5446300 (1995-08-01), Amato et al.
patent: 5464993 (1995-11-01), Zambrano et al.
Patent Abstracts of Japan, vol. 15, No. 236, Jun. 18 1989.
Miyazaki et al., "A Novel High Voltage 3-Phase Monolithic Inverter IC" 3rd Int'l Symp. Power Semiconductor Devices, Apr. 22, 1991.
"Power losses of the cascade connection compared to a single common-emitter bipolar transistor"Electronic Engineering, Nov. 1981, p. 67.

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