Method for making metal contact studs between first level metal

Details Method for making metal contact studs between first level metal Method for making metal contact studs between first level metal

1984-10-29

1985-09-17

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 29571, 29576W, 148DIG131, 148DIG100, 156643, 156650, 357 49, H01L 21312, H01L 2176, H01L 21461

Patent

active

045411689

ABSTRACT:
The present method discloses the steps to form metal device contact studs between regions of a semiconductor device, such as an NPN vertical bipolar transistor, and the first level metal, the studs overlapping both a contact region (such as the base or the collector) and an adjacent polyimide-filled trench. The method is comprised of the following steps:

REFERENCES:
patent: 3801880 (1974-04-01), Harada et al.
patent: 4307132 (1981-12-01), Chu et al.
patent: 4307180 (1981-12-01), Pogge
patent: 4333227 (1982-06-01), Horng et al.
patent: 4506434 (1985-03-01), Ogawa et al.
IBM, TDB, May 1984, pp. 6506-6507.
IBM, TDB, Mar. 1977, p. 3732.
IBM, TDB, Feb. 1977, p. 3364.
IBM, TDB, Sep. 1978, p. 1464.
IBM, TDB, Feb. 1981, p. 4140.
IBM, TDB, Sep. 1979, p. 1442.

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