Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1999-07-01
2000-10-31
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257535, H01L 2900
Patent
active
061406937
ABSTRACT:
A method for making metal capacitors for deep submicrometer processes for integrated circuits is described. The method provides metal capacitors with high capacitance per unit area, low voltage coefficients, and excellent capacitance distribution (uniformity) across the substrate. The method involves depositing a first insulating layer on a substrate having completed semiconductor devices. A first metal layer is deposited and patterned to form bottom electrodes and interconnecting metal lines. A thin capacitor dielectric layer is deposited, and a thin second metal or TiN layer is deposited and patterned to form the top electrodes. A thick second insulating layer is deposited and planarized, and an array of via holes are etched to the top electrodes to provide for low-resistance contacts and via holes for the interconnecting metal lines. A third conducting metal layer is deposited over the second insulating layer and in the via holes, and is patterned to form a thick metal plate over the capacitors to provide low-resistance contacts to the capacitors and concurrently to form the next level of metal interconnections.
REFERENCES:
patent: 5338701 (1994-08-01), Hsu et al.
patent: 5554558 (1996-09-01), Hsu et al.
patent: 5571746 (1996-11-01), Pan
patent: 5614111 (1997-03-01), Lavene
patent: 5624864 (1997-04-01), Arita et al.
patent: 5917230 (1999-06-01), Aldrich
patent: 5928960 (1999-07-01), Greco et al.
Shiue Ruey-Yun
Weng Jiue Wen
Ackerman Stephen B.
Hu Shouxiang
Loke Steven H.
Saile George O.
Taiwan Semiconductor Manufacturing Company
LandOfFree
Method for making metal capacitors for deep submicrometer proces does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making metal capacitors for deep submicrometer proces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making metal capacitors for deep submicrometer proces will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2055080