Method for making liquid crystal display device with reduced mas

Details Method for making liquid crystal display device with reduced mas Method for making liquid crystal display device with reduced mas

1998-10-22

1999-12-07

Fourson, George

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438157, 438158, 257 59, 257 72, H01L 2100

Patent

active

059982306

ABSTRACT:
In a method for making a liquid crystal display device, a first conductive film is formed on a substrate, and patterned to form a gate electrode and a gate line; a gate insulating film for covering the gate electrode and the gate line, a semiconductor film, an impurity-doped semiconductor film, and a second conductive film are continuously formed; the second conductive film and the impurity-doped semiconductor film are patterned using a common mask to form a source electrode, a source line, and a drain electrode from the second conductive film and to form an ohmic contact layer from the impurity-doped semiconductor layer; an insulating film is formed onto at least the source electrode, the source line, the drain electrode, and the semiconductor film; the insulating film, the semiconductor film, and the gate insulating film are patterned using a common mask to form a thin film transistor to be in contact with a pixel electrode; a transparent conductive film is deposited on the non-deposited section of the substrate and patterned to form the pixel electrode; and a liquid crystal is enclosed between the resulting thin film transistor substrate and a counter substrate.

REFERENCES:
patent: 5153142 (1992-10-01), Hsieh
patent: 5166085 (1992-11-01), Wakai et al.
patent: 5580796 (1996-12-01), Takizawa et al.

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