Method for making light-emitting diode having improved moisture

Details Method for making light-emitting diode having improved moisture Method for making light-emitting diode having improved moisture

1996-12-13

1999-03-30

Brown, Peter Toby

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 47, 438 94, 438557, 148DIG72, H01L 2100

Patent

active

058888438

ABSTRACT:
A light-emitting diode having improved moisture resistance characteristics comprises a p-type gallium arsenide substrate and four epitaxial layers of Al.sub.x Ga.sub.1-x As (22, 23, 24 and 25). These epitaxial layers comprises an intervening layer (22) of p-type Al.sub.x Ga.sub.1-x As, a cladding layer (23) of p-type Al.sub.x2 Ga.sub.1-x2 As, an active layer (24) of Al.sub.x3 Ga.sub.1-x3 As, and a window layer (25) of Al.sub.x4 Ga.sub.1-x4 As so as to form a double-hetero structure, where x1, x2, x3 and x4 represent mixed crystal ratios of aluminum to arsenic of the layers, respectively, and meet the condition that:

REFERENCES:
patent: 4592791 (1986-06-01), Nakajima et al.
patent: 4944811 (1990-07-01), Sukegawa et al.
patent: 5061643 (1991-10-01), Yagi
patent: 5093696 (1992-03-01), Kinoshita

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