Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-12-14
2009-08-11
O'Shea, Sandra L (Department: 2875)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C362S310000, C362S332000, C362S555000, C362S800000, C257S098000, C257S099000, C438S022000, C438S025000, C438S026000
Reexamination Certificate
active
07572654
ABSTRACT:
An exemplary light emitting diode (30) includes a light output unit (31), an optical lens (33) and a reflective film (35). The optical lens includes a light input surface (331) facing the light output unit, a top interface (333) opposite to the light input surface, and a light output surface (335) between the light input surface and the top interface. The reflective film is integrally formed on and in immediate contact with the top interface of the optical lens. The reflective film is made of a transparent resin matrix material dispersed with a plurality of reflective particles. A method for making the light emitting diode is also provided.
REFERENCES:
patent: 6679621 (2004-01-01), West et al.
patent: 6960872 (2005-11-01), Beeson et al.
patent: 2006/0208269 (2006-09-01), Kim et al.
Dunwiddie Meghan K
Hon Hai Precision Industry Co. Ltd.
O'Shea Sandra L
Reiss Steven M.
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