Method for making light emitting diode

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Details

C362S310000, C362S332000, C362S555000, C362S800000, C257S098000, C257S099000, C438S022000, C438S025000, C438S026000

Reexamination Certificate

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07572654

ABSTRACT:
An exemplary light emitting diode (30) includes a light output unit (31), an optical lens (33) and a reflective film (35). The optical lens includes a light input surface (331) facing the light output unit, a top interface (333) opposite to the light input surface, and a light output surface (335) between the light input surface and the top interface. The reflective film is integrally formed on and in immediate contact with the top interface of the optical lens. The reflective film is made of a transparent resin matrix material dispersed with a plurality of reflective particles. A method for making the light emitting diode is also provided.

REFERENCES:
patent: 6679621 (2004-01-01), West et al.
patent: 6960872 (2005-11-01), Beeson et al.
patent: 2006/0208269 (2006-09-01), Kim et al.

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