Method for making late programmable read-only memory devices

Details Method for making late programmable read-only memory devices Method for making late programmable read-only memory devices

1981-05-28

1982-11-23

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29577C, 148187, H01L 2122

Patent

active

043598170

ABSTRACT:
A method of making a high speed and high density IGFET read-only memory and encoding it late in said method. A unique ROM structure permits encoding by ion implantation thin apertures in a phosphosilicate glass layer, without requiring ROM output lines passing over the implant apertures or expanding ROM size to obtain highest ROM operating speed.

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