Method for making large-volume CaF 2 single cystals with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S011000, C117S078000, C117S081000, C117S082000, C117S083000, C117S003000, C117S004000, C117S010000, C117S940000

Reexamination Certificate

active

11063147

ABSTRACT:
The method provides CaF2single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then sublimed at a sublimation temperature of at least 1100° C. in a vacuum of at most 5*10−4mbar to form a vapor. The vapor is condensed at a condensation temperature of at least 500° C., which is at least 20° C. below the sublimitation temperature, to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2starting material including waste material and cuttings from previously used melts.

REFERENCES:
patent: 5705140 (1998-01-01), Johansing, Jr.
patent: 2001/0025598 (2001-10-01), Staeblein et al.
patent: 2002/0020338 (2002-02-01), Oba et al.
patent: 2002/0038625 (2002-04-01), Sakuma et al.
patent: 2002/0166500 (2002-11-01), Yogo et al.
patent: 2003/0089307 (2003-05-01), Wehrhan et al.
patent: 2004/0099205 (2004-05-01), Li et al.
patent: 2004/0154527 (2004-08-01), Li et al.
patent: 102 08 157 (2002-09-01), None
patent: 101 42 651 (2003-03-01), None
patent: 10 2004 003 831 (2004-07-01), None
patent: 0 939 147 (1999-09-01), None
patent: 0 942 297 (1999-09-01), None
patent: 0 972 863 (2000-01-01), None
patent: 0 995 820 (2000-04-01), None
patent: 1 234 898 (2002-08-01), None
patent: 1 380 675 (2004-01-01), None
patent: 2001335398 (2001-12-01), None
patent: 2003-327499 (2003-11-01), None
J. T. Mouchovski: “Growth of Ultra-Violet Grade . . . ” Journal of Crystal Growth 162, 1996, pp. 79-82.
R. Leckebusch et al: “Perfektion Von . . . ” Journal of Crystal Growth 13/14, 1972, pp. 276-281.
Stover J.C.-Optical Scattering—Measurements and Analysis, McGraw-Hill, Inc. 1990.
K. Recker et al: “Zur Zuechtung Von . . . ” Journal of Crtstal Growth 9, 1971, pp. 274-280 (With Eng. Abstract).
R. Leckebuscg et al: “Perfektion Con CaF2 . . . ” Journal of Crystal Growth 13/14, 1972 pp. 276-281 (With Eng. Abstract.).
B.E. Kinsman et al: “Preparation and Purification of Metal . . . ” Advanced Materials For Optics and Electronics, vol. 5, pp. 45-51, 1995.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for making large-volume CaF 2 single cystals with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making large-volume CaF 2 single cystals with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making large-volume CaF 2 single cystals with... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3933995

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.