Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2008-07-01
2008-07-01
Kunemund, Robert M. (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S011000, C117S078000, C117S081000, C117S082000, C117S083000, C117S003000, C117S004000, C117S010000, C117S940000
Reexamination Certificate
active
07393409
ABSTRACT:
The method provides CaF2single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then sublimed at a sublimation temperature of at least 1100° C. in a vacuum of at most 5*10−4mbar to form a vapor. The vapor is condensed at a condensation temperature of at least 500° C., which is at least 20° C. below the sublimitation temperature, to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2starting material including waste material and cuttings from previously used melts.
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Kandler Joerg
Menzel Andreas
Mueller Matthias
Ortmann Lars
Parthier Lutz
Kunemund Robert M.
Schott AG
Song Matthew J
Striker Michael J.
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