Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Patent
1997-09-08
1998-09-01
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
117 70, 117 7, 264657, 264650, 264669, 264653, 501154, C30B 700
Patent
active
058006117
ABSTRACT:
A single crystal silicon sheet is formed from a polycrystalline sheet by melting a relatively small portion of the sheet at an initial location and defining a single crystallographic orientation for the silicon by placing a small silicon seed crystal in contact with the melted silicon at the initial location. The melted portion is then moved from the initial location throughout the sheet to move impurities in the sheet to the edges of the sheet and to extend the crystallographic orientation of the silicon established at the initial location to the whole sheet, inwardly of the edges. The edges containing impurities and any remaining polycrystalline structure are removed to produce a sheet of single crystal silicon. A polycrystalline sheet may be formed by spreading a slurry of a silicon powder, a binder, and solvent on a surface and allowing the solvent to evaporate to form a sheet. The sheet is moistened to cause it to expand and sheer clear of the surface. The sheet is placed in a support frame or on a support surface and is heated to deploymerize the binder. The sheet is then preferably heated further to at least partially sinter the sheet into a polycrystalline sheet which is then zone refined by moving a melt area throughout the sheet as indicated to convert it from a polycrystalline sheet to a sheet of single crystal silicon.
REFERENCES:
patent: 2358211 (1944-09-01), Christensen et al.
patent: 4102765 (1978-07-01), Fey et al.
patent: 4102766 (1978-07-01), Fey et al.
patent: 4102767 (1978-07-01), Mazelsky et al.
patent: 4131659 (1978-12-01), Authier et al.
patent: 4830703 (1989-05-01), Matsutani
Breneman R. Bruce
Defillo Evelyn A.
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