Method for making integrated semiconductor circuit structure wit

Details Method for making integrated semiconductor circuit structure wit Method for making integrated semiconductor circuit structure wit

1981-01-22

1982-06-01

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156643, 156653, 156656, 156657, 427 89, 427 90, 427 93, 427 96, H01L 21283

Patent

active

043328393

ABSTRACT:
The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.

REFERENCES:
patent: 4128670 (1978-12-01), Gaensslen
patent: 4180596 (1979-12-01), Crowder et al.
Sinha et al., "Generic Reliability of the High-Conductivity TaSi.sub.2
+ Poly-Si Gate MOS Structure", 18th Annual Proceedings Reliability Physics 1980, Las Vegas, Nevada, Apr. 8-10, 1980.

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