Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1997-06-18
1999-03-16
Brown, Peter Toby
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 41, 438 43, 438 44, 438 47, 148DIG50, H01L 2100
Patent
active
058829512
ABSTRACT:
An InP-based opto-electronic integrated circuit including an active layer having one or more quantum wells (36, 38). According to the invention, a barrier layer (34) of AlGaInAs is formed, preferably between the quantum wells and the substrate (30) to prevent the migration of species from the substrate and lower InP layers that tend to shift the emission wavelengths of the quantum wells to shorter wavelengths, i.e., a blue shift. The barrier layer can be patterned so that some areas of the quantum wells exhibit blue shifting to a shorter wavelength while other areas retain their longer wavelength during annealing.
REFERENCES:
patent: 5187553 (1993-02-01), Makita
patent: 5204539 (1993-04-01), Tsuji et al.
patent: 5338947 (1994-08-01), Watanabe
patent: 5345456 (1994-09-01), Dai et al.
patent: 5583878 (1996-12-01), Shimizu et al.
Aoki, et al., "Monolithic Integration of DFB Lasers and Electroabsorption Modulators Using In-Plane Quantum Energy Control of MQW Structures," International Journal of High Speed and Systems, vol. 5, No., 1, 1994, pp. 67-90.
Camassel, et al., "Experimental Investigation of the Thermal Stability of Strained InGaAs/InGaAsP MQWs," pp. 36-39, Proceedings of Fifth International Conference on Indium Phosphide and Related Materials, Apr. 19-22, 1993, Paris, France (IEEE Catalog #93CH3276-3).
Francis, et al., "Selective Band-Gap Blueshifting of InGaAsP/InGaAs(P) Quantum Wells by Thermal Intermixing with Phosphorus Pressure and Dielectric Capping," J. Appl. Phys., vol. 75, No. 7, Apr. 1, 1994, pp. 3607-3610.
Gillin, et al., "Group V Interdiffusion in In.sub.0.66 Ga.sub.0.33 As/In.sub.0.66 Ga.sub.0.33 As.sub.0.7 P.sub.0.3 Quantum Well Structures," pp. 33-35, Proceedings of Fifth International Conference on Indium Phosphide and Related Materials, Apr. 19-22, 1993, Paris, France (IEEE Catalog #93CH3276-3).
Glew, "Interdiffusion of InGaAs/InGaAsP Quantum Wells," pp. 29-32, Proceedings of Fifth International Conference on Indium Phosphide and Related Materials, Apr. 19-22, 1993, Paris, France (IEEE Catalog #93CH3276-3).
Hamoudi, et al., "Controlled Disordering of Compressively Strained InGaAsP Multiple Quantum Wells under SiO:P Encapsulant and Application to Laser-Modulator Integration," J. Appl. Phys., vol. 78, No. 9, Nov. 1, 1995, pp. 5638-5641.
Odagawa, et al., "High-Speed Operation of Strained InGaAs/InGaAsP MQW Lasers under Zero-Bias Condition," IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1682-1686.
Rao, et al., "New Encapsulant Source for III-V Quantum Well Disordering," Appl. Phys. Lett., vol. 66, No. 4, Jan. 23, 1995, pp. 472-474.
Vettese, et al., "An Investigation into the Effects of Thermal Annealing on Long Wavelength InGaAs/InGaAsP Multi-Quantum Well Lasers," pp. 40-44, Proceedings of Fifth International Conference on Indium Phosphide and Related Materials, Apr. 19-22, 1993, Paris, France (IEEE Catalog #93CH3276-3).
Bell Communications Research Inc.
Brown Peter Toby
Giordano Joeph
Hey David A.
Pham Long
LandOfFree
Method for making InP-based lasers with reduced blue shifts does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making InP-based lasers with reduced blue shifts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making InP-based lasers with reduced blue shifts will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-816967