Method for making improved Schottky-barrier gate gallium arsenid

Details Method for making improved Schottky-barrier gate gallium arsenid Method for making improved Schottky-barrier gate gallium arsenid

1978-02-21

1981-05-05

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

29571, 156649, 156662, 148 15, 148175, 427 88, 427 89, 430314, H01L 21302, H01L 2948

Patent

active

042659345

ABSTRACT:
A Schottky-barrier gate gallium arsenide field effect structure is made using a self-aligned gate fabrication technique. The resulting device includes source and drain regions, which are parts of a conducting channel formed through ion implantation or epitaxial growth or a combination of the two. A gate is formed on the same channel by first etching a portion of the channel between the source and the drain regions to form a gate window which then receives a Schottky-barrier gate electrode.

REFERENCES:
patent: 3675313 (1972-07-01), Driver
patent: 3678573 (1972-07-01), Driver
patent: 3762945 (1973-10-01), Di Lorenzo
patent: 3861024 (1975-01-01), Napoli
patent: 3898353 (1975-08-01), Napoli
patent: 3914784 (1975-10-01), Hunsperger
patent: 4040168 (1977-08-01), Huang
patent: 4077111 (1978-03-01), Driver
Kohn, V-Shaped-Gate . . . Performance, Electronics Letters, vol. 11, No. 8 p. 160, (1975).

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