Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1996-10-17
1998-11-10
Niebling, John
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 45, 438 46, 438504, 438506, 438508, 438509, 148DIG3, 148DIG55, 148DIG66, 257 13, 372 45, H01L 2100
Patent
active
058343318
ABSTRACT:
A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device.
REFERENCES:
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5334277 (1994-08-01), Nakamura
patent: 5433169 (1995-07-01), Nakamura
patent: 5468678 (1995-11-01), Nakamura et al.
patent: 5583879 (1996-12-01), Yamazaki et al.
patent: 5604763 (1997-02-01), Kato et al.
patent: 5625202 (1997-04-01), Chai
Walker et al., "GaN based semiconductors for future optoelectronics", Inst. Phys. Conf. Ser. No. 145: Ch. 9, pp. 1133-1138 (1996 IOP Publishing Ltd.).
Kato, et al., "Defects of 6H-SiC substrates made by Acheson's method and by modified Lely's method", Inst. Phys. Conf. Ser. No. 142: Ch. 2, pp. 417-420 (1996 IOP Publishing Ltd.).
Nakamura et al., "Characteristics of InGaN multi-quantum-well-structure laser diodes", Appl. Phys. Lett., vol. 68:23, pp. 3269-3271 (Jun. 3, 1996).
Razeghi et al., "Semiconductor ultraviolet detectors", Appl. Phys. Rev., vol. 78:10, pp. 7433-7473 (May 15, 1996).
Walker, et al., "AlGaN ultraviolet photoconductors grown on sapphire", Appl. Phys. Lett., vol. 68:15, pp. 2100-2101 (Apr. 8, 1996).
Dovidenko et al., "Aluminum nitride films on different orientations of sapphire and silicon", J. Appl. Phys., vol. 79:5, pp. 2439-2445 (Mar. 1, 1996).
Kung, et al., "GaN, GaAlN, and AlN for use in UV detectors for astrophysics: and update", SPIE, vol. 2685, pp. 126-131 (Feb. 1-2, 1996).
Saxler, et al., "UV photodetectors based on Al.sub.x Ga.sub.1-x N grown by MOCVD", SPIE, vol. 2685, pp. 132-139 (Feb. 1-2, 1996).
Kung, et al., "Kinetics of photoconductivity in n-type GaN photodetector", Appl. Phys. Lett., vol. 67:25, pp. 3792-3794 (Dec. 1995).
Zhang et al., "Photovoltaic effects in GaN structures with p-n junctions", Appl. Phys. Lett., vol. 67:14, pp. 2028-2030 (Oct. 1995).
Zhang et al., "Growth of A1.sub.x Ga.sub.1-x N:Ge on Sapphire and silicon substrates", Appl. Phys. Lett., vol. 67:12, pp. 1745-1747 (Sep. 1995).
Kung et al., "High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates", Appl. Phys. Lett., vol. 66:22, pp. 2958-2960 (May 1995).
Kung et al., "Low pressure metalorganic chemical vapor deposition of high quality AIN and GaN thin films on sapphire and silicon substrates", SPIE, vol. 2397, pp. 311-320, (Feb. 1995).
Razeghi et al., "Ultra-Violet Detectors for Astrophysics, Present and Future", SPIE, vol. 2397, pp. 210-217 (Feb. 1995).
Zhang et al., "Photoluminescence Study of GaN", Acta Physica Polonica A, vol. 88:4, pp. 601-606 (1995).
Kung et al., "Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates", J. Appl. Phys., vol. 75:9, pp. 4515-4519 (May 1994).
Sun et al., "A crystallographic model of (00.1) aluminum nitride epitaxial thin film growth on (00.1) sapphire substrate", J. Appl. Phys., vol. 75:8, pp. 3964-3967 (Apr. 1994).
Saxler et al., "High quality aluminum nitride epitaxial layers grown on sapphire substrates", Appl. Phys. Lett., vol. 64:3, pp. 339-341 (Jan. 1994).
Sun et al., "Al.sub.x Ga.sub.1-x N grown on (00.1) and (01.2) sapphire", Inst. Phys. Conf., Ser. No. 137, Ch. 4 pp. 425-428 (1994 IOP Publishing Ltd.).
Sun et al., "Comparison of the physical properties of GaN thin films deposited on (0001) and (0112) sapphire substrates", Appl. Phys. Lett., vol. 63:7, pp. 973-975 (Aug. 1993).
Sun et al., "Improvements on the structural and electrical properties of GaN thin films grown by Metalorganic Chemical Vapor Deposition using different substrate orientations".
Hoff et al., "Aluminum Free Normal Incidence GaAs/Ga.sub.0.51 In.sub.0.49 P Quantum WII Intersubband Photodectors".
Niebling John
Northwestern University
Pham Long
LandOfFree
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