Method for making hybrid dielectric film

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

Reexamination Certificate

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C427S097200, C427S097400, C427S255600, C438S763000, C438S778000, C438S780000

Reexamination Certificate

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10936156

ABSTRACT:
A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

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Han, K., et al., “Stable and robust low-voltage pentacene transistor based on a hybrid dielectric”. Microelectronic Engineering, vol. 84, Issues 9-10, Sep./Oct. 2007, pp. 2173-2176.

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