Method for making high-voltage high-speed gallium arsenide power

Details Method for making high-voltage high-speed gallium arsenide power Method for making high-voltage high-speed gallium arsenide power

1994-10-21

1997-04-22

Niebling, John

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

257473, 438572, 438573, 438167, H01L 21265

Patent

active

056228775

ABSTRACT:
A power GaAs Schottky diode with a chemically deposited Ni barrier having a reverse breakdown voltage of 140 V, a forward voltage drop at 50 A/cm.sup.2 of 0.7 V at 23.degree. C., 0.5 V at 150.degree. C. and 0.3 V at 250.degree. C. and having a reverse leakage current density at -50 V of 0.1 .mu.A/cm.sup.2 at 23.degree. C. and 1 mA/cm.sup.2 at 150.degree. C. The high-voltage high-speed power Schottky semiconductor device is made by chemically depositing a nickel barrier electrode on a semiconductor which includes gallium arsenide and then etching the device to create side portions which are treated and protected to create the Schottky device.

REFERENCES:
patent: 3198659 (1965-08-01), Levy
patent: 3703408 (1972-11-01), Belasco et al.
patent: 3706128 (1972-12-01), Heer
patent: 3820235 (1974-06-01), Goldman
patent: 3886580 (1975-05-01), Calviello
patent: 3891479 (1975-06-01), Zwernemann
patent: 3915716 (1975-10-01), Haack
patent: 5027166 (1991-06-01), Ohtsuka et al.
patent: 5112774 (1992-05-01), Ohtsuka et al.
patent: 5135878 (1992-08-01), Bartur
G. Ashkinazi et al, "Nickel-Gallium . . . Schottky Diodes", Solid-State Electronics, vol. 36, No. 1, pp. 13-18, 1993.
Muller, Device Electronics for IC's, 1986, p. 31.
Sze, Semiconductor Devices Physics and Tech., John Wiley & Sons, p. 38, 1985.
Jambotkar, "High-Voltage Power . . . Diodes", IBM Tech. Dis. Bull., vol. 25, No. 5, pp. 2331-2333, Oct. 1982.

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