Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals
Patent
1994-10-03
1995-08-29
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes joining independent crystals
117 89, 423416, C30B 2502
Patent
active
054451060
ABSTRACT:
A method is disclosed for producing continuous CVD diamond films with at least two controlled diamond thermal conductivity layers having improved thermal conductivity in the direction parallel to the diamond film plane to increasing the lateral heat spreading ability of the diamond film. Also, disclosed is a method to decrease the time to deposit high thermal conducting diamond by chemical vapor deposition.
REFERENCES:
patent: 5114696 (1992-05-01), Purdes
patent: 5273731 (1993-12-01), Anthony et al.
patent: 5310596 (1994-05-01), Bigelow et al.
patent: 5346729 (1994-09-01), Pitts et al.
"Isotherms in Diamond Heat Sinks, Non-Linear Heat Transfer in an Excellent Heat Conductor", J. Doting, et al., IEEE, 1988, pp. 113-117.
"Temperature Distribution in GaAs Lasers with Diamond Film Heatsink", GK Reeves, et al., Electronics Letters, Dec. 3, 1992, vol. 28, No. 25, pp. 2317-2318.
"Thermal and Optical Applications of Thin Film Diamond", M. Seal, Phil. Trans. R. Soc. London, 1993, pp. 119-128.
Breneman R. Bruce
Garrett Felisa
General Electric Company
Johnson Noreen C.
Magee Jr. James
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