Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2006-03-07
2006-03-07
Kim, Paul D (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603070, C029S603110, C029S603160, C029S603180, C029S605000, C029S606000, C360S121000, C360S122000, C360S125330, C360S317000, C427S127000, C427S128000, C216S065000, C205S119000, C205S122000, C204S192150, C451S005000, C451S041000
Reexamination Certificate
active
07007372
ABSTRACT:
An inductive write element is disclosed for use in a magnetic data recording system. The write element provides increased data rate and data density capabilities through improved magnetic flux flow through the element. The write element includes a magnetic yoke constructed of first and second magnetic poles. The first pole includes a pedestal constructed of a high magnetic moment (high Bsat) material, which is preferably FeRhN nanocrystalline films with lamination layers of CoZrCr. The second pole includes a thin inner layer of high Bsatmaterial (also preferably FeRhN nanocrystalline films with lamination layers of CoZrCr), the remainder being constructed of a magnetic material capable of being electroplated, such as a Ni—Fe alloy. An electrically conductive coil passes through the yoke between the first and second poles to induce a magnetic flux in the yoke when an electrical current is caused to flow through the coil. Magnetic flux in the yoke produces a fringing field at a write gap whereby a signal can be imparted onto a magnetic medium passing thereby.
REFERENCES:
patent: 5843521 (1998-12-01), Ju et al.
patent: 5901431 (1999-05-01), Santini
patent: 6108167 (2000-08-01), Tateyama et al.
patent: 6198609 (2001-03-01), Barr et al.
patent: 6233116 (2001-05-01), Chen et al.
patent: 6317290 (2001-11-01), Wang et al.
patent: 6430806 (2002-08-01), Chen et al.
patent: 08111011 (1996-04-01), None
“Electrochemical corrosion study of high moment thin film head materials”; Gangopadhyay, S.; Inturi, V.R.; Barnard, J.A.; Parker, M.R.; Saffarian, H.M.; Warren, G.W.; Magnetics, IEEE Transactions on, vol.: 30, Issue: 6, Nov. 1994; pp. 3918 3920.
Chen Yingjian
Shi Xizeng
Tong Hua-Ching
Wang Lei
Haynes Beffel & Wolfeld LLP
Kim Paul D
Prejean, Esq. Johnathan E.
Western Digital (Fremont) Inc.
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