Method for making high sheet resistivity resistors

Details Method for making high sheet resistivity resistors Method for making high sheet resistivity resistors

1982-12-13

1984-08-07

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 29576C, 29578, H01L 21225

Patent

active

044642121

ABSTRACT:
A high sheet resistivity, doped semiconductor resistor is made by a process which produces a resistor diffusion or ion implantation mask having a narrow dimension determined by a "sidewall" technique. The sidewall technique defines the narrow dimension by the thickness of a doped or undoped layer deposited on a different underlying layer having horizontal and vertical surfaces. The horizontal portion of the deposited layer is removed by anistropic etching to leave only the vertical portion. The vertical portion, if undoped, is removed to define a diffused or ion-implanted resistor. The vertical portion, if doped, optionally may be removed, after heating to form a diffused resistor, or may be left in place to form a resistor in shunt with the diffused resistor.

REFERENCES:
patent: 4209349 (1980-06-01), Ho et al.
patent: 4209350 (1980-06-01), Ho et al.
patent: 4234362 (1980-11-01), Riseman
patent: 4298401 (1981-11-01), Nuez et al.
patent: 4332070 (1982-06-01), Kant
patent: 4333227 (1982-06-01), Horng et al.

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