Method for making high-sheet-resistance polysilicon resistors fo

Details Method for making high-sheet-resistance polysilicon resistors fo Method for making high-sheet-resistance polysilicon resistors fo

1999-06-14

2000-04-25

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Resistor

438657, 438658, H01L 218244

Patent

active

060543590

ABSTRACT:
A high-sheet-resistance polysilicon resistor for integrated circuits is achieved by using a two-layer polysilicon process. After forming FET gate electrodes and capacitor bottom electrodes from a polycide layer, a thin interpolysilicon oxide (IPO) layer is deposited to form the capacitor interelectrode dielectric. A doped polysilicon layer and an undoped polysilicon layer are deposited and patterned to form the resistor. The doped polysilicon layer is in-situ doped to minimize the temperature and voltage coefficients of resistivity. Since the undoped polysilicon layer has a very high resistance (infinite), the resistance is predominantly determined by the doped polysilicon layer. The doped polysilicon layer can be reduced in thickness (less than 1000 Angstroms) to further increase the sheet resistance for mixed-mode circuits, while the undoped polysilicon layer allows contact openings to be etched in an insulating layer over the resistor without overetching the thin doped polysilicon layer and damaging the underlying IPO layer.

REFERENCES:
patent: 5348901 (1994-09-01), Chen et al.
patent: 5530418 (1996-06-01), Hsu et al.
patent: 5728598 (1998-03-01), Wu et al.
patent: 5728615 (1998-03-01), Cheng et al.
patent: 5837592 (1998-11-01), Chang et al.
patent: 5885862 (1999-03-01), Jao et al.

Affiliated with

Also associated with

Rating

Method for making high-sheet-resistance polysilicon resistors fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making high-sheet-resistance polysilicon resistors fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making high-sheet-resistance polysilicon resistors fo will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-992837