Metal treatment – Compositions – Heat treating
Patent
1981-10-29
1984-10-30
Hearn, Brian E.
Metal treatment
Compositions
Heat treating
29576B, 376183, H01L 21268, H01L 21263, H01L 2126, H01L 21324
Patent
active
044798296
ABSTRACT:
A high resistance semiconductor substrate body with a thin low resistance active semiconductor layer thereon is generated by a method including the steps of subjecting the semiconductor substrate body to neutron bombardment to a degree which produces high resistance in the semiconductor body and whereby doping substances are generated in the substrate body by the thermal neutron bombardment. A thin low resistant active semiconductor layer is then generated on the substrate body by annealing, a surface of the semiconductor substrate body up to a selected depth by laser radiation or electron radiation such that the lattice deterioration which was caused by the neutron bombardment is eliminated but the doping which was generated by the transmutation of elements during neutron bombardment remains. The annealing can be undertaken only in selected regions on the surface of the semiconductor substrate body, thereby facilitating the construction of integrated circuit components thereon.
REFERENCES:
patent: 3897273 (1975-07-01), Marsh et al.
patent: 3967982 (1976-07-01), Arndt et al.
patent: 4025365 (1977-05-01), Martin et al.
"Pulsed Electron-Beam Annealing of Selenium-Implanted Gallium Arsenide," Inada et al., Appl. Phys. Lett. 35 (7), Oct. 1, 1979.
"Planar GaAs IC Technology: Applications for Digital LSI," Eden et al., IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, Aug. 1978.
Article Entitled: "Doping of Semi-Insulating and N-Type GaAs by Neutron Transmutation," Mueller et al., J. Appl. Phys. 51 (6), Jun. 1980, pp. 3178-3180.
Hearn Brian E.
Schiavelli Alan E.
Siemens Aktiengesellschaft
LandOfFree
Method for making high resistance chromium-free semiconductor su does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making high resistance chromium-free semiconductor su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making high resistance chromium-free semiconductor su will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1101075