Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-02-28
1992-01-28
Hearn, Brian E.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
437189, 437190, 437194, 505701, 505703, 505923, H01L 2144, H01L 3912
Patent
active
050844377
ABSTRACT:
This is a method for making an ohmic connection between a semiconductor and oxide superconductor, the connection being such that current can pass between the semiconductor and the superconductor without going through a degraded portion which is greater than the coherence length of the superconductor. The method can comprise depositing a buffer layer (which is essentially inert to the oxide superconductor) on a first portion of a semiconductor substrate, and depositing oxide superconductor on the barrier layer, and depositing a superconductor contact layer (e.g. of gold or silver) on the oxide superconductor, and depositing a semiconductor contact layer on a second portion of the semiconductor substrate (the semiconductor contact layer being, for example, of aluminum, or a refractory metal silicide); and depositing a layr (e.g. of gold or aluminum) on the semiconductor contact layer and on at least a portion of the superconductor contact layer to electrically connect the semiconductor contact laye and the superconductor contact layer. Alternately, the method can comprise depositing a buffer layer on a first portion of a substrate, and depositing oxide superconductor on the barrier layer, and depositing a superconductor contact layer on the oxide superconductor, and depositing a semiconductor on a second portion of the substrate, and depositing a semiconductor contact layer on the semiconductor, and depositing a layer on the semiconductor contact layer and on at least a portion of the superconductor contact layer to electrically connect the semiconductor contact layer and the superconductor contact layer. Preferably, the superconductor contact layer is of gold, the semiconductor contact layer and the interconnecting layer are of aluminum, and the buffer layer is of zirconium oxide.
REFERENCES:
patent: 4913769 (1990-04-01), Kanda et al.
patent: 4959346 (1990-09-01), Mogro-Campero et al.
MAM Gijs et al., "Superconducting Proximity Effect In Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7 -AgPb-Trilayer Structures", Solid State Comm. vol. 71, No. 7, pp. 575-577, 1989.
Y. Tzeng, "Fabrication of Electrical Contacts to VBa.sub.2 Cu.sub.3 O.sub.7-x Superconductor by Molten Silver Processing" J. Electrochem. Soc., 135(5), pp. 1309-1310.
E. Ekholm et al., "Alternation and Dispersion for High-Tc Superconducting Microstrip Lines", IEEE Trans. Microwave Theory Tech., vol. 38, No. 4, Apr. 1990, pp. 387-395.
Cillo Daniel P.
Hearn Brian E.
Holtzman Laura M.
Westinghouse Electric Corp.
LandOfFree
Method for making high-current, ohmic contacts between semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making high-current, ohmic contacts between semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making high-current, ohmic contacts between semicondu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1861086