Method for making high-critical-current-density YBa.sub.2 Cu.sub

Details Method for making high-critical-current-density YBa.sub.2 Cu.sub Method for making high-critical-current-density YBa.sub.2 Cu.sub

1998-01-28

1999-10-26

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Coating

505500, 505238, 505732, 505742, B05D 512, C23C 1424

Patent

active

059728477

ABSTRACT:
A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.

REFERENCES:
Mankiewich et al, MRS Symp. Proc. vol. 99 (1988) pp. 119-125, No month.
Yee et al, AIP Conference Proceedings No. 165 (1988) pp. 132-140, No month.
Mankiewich, et al., "High Critical-Current Density Ba.sub.2 YCu.sub.3 O.sub.7 Thin Films Produced By Coevaporation of Y, Cu, BaF.sub.2 ", Mat. Res. Soc. Symp. Proc.99:119-125 (1988).
He et al, Physica C 275 (1997) pp. 155-161.
Skofronick et al, J. Appl. Phys. 76(8), Oct. 1994, pp. 4753-4760.
Chan, et al., "Effect of the Post-Deposition Processing Ambient on the Preparation of Superconducting Yba.sub.2 Cu.sub.3 O.sub.7-x Coevaporated Thin Films Using a BaF.sub.2 ", Appl. Phys Lett. 53 (15): 1443-1445 (1988).
Feenstra, et al, "Effect of Oxygen Pressure on the Synthesis of Yba.sub.2 Cu.sub.3 O.sub.7-x Thin Films by Post-Deposition Annealing", J. Appl. Phys. 69 (9): 6569-6585 (1991).
Mankiewich, et al., "Reproducible Technique for Fabrication of Thin Films of High Transition Temperature Superconductors", App. Phys. Lett. 51 (21): 1753-1755 (1987).

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