Method for making hexagonal silicon carbide platelets with the a

Details Method for making hexagonal silicon carbide platelets with the a Method for making hexagonal silicon carbide platelets with the a

1990-07-05

1993-04-13

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

156603, 156DIG64, 423346, C01B 3136

Patent

active

052021050

ABSTRACT:
Crystalline silicon carbide wherein at least 90 weight percent of the silicon carbide is formed from a plurality of hexagonal crystal lattices wherein at least 80 weight percent of the crystals formed from the lattices contain at least a portion of opposing parallel base faces separated by a distance of from 0.5 to 20 microns. The crystals may be in the form of separate particles, e.g. separate platelets, or may comprise an intergrown structure. The crystalline silicon carbide of the invention is produced by heating a porous alpha silicon carbide precursor composition comprising silicon and carbon in intimate contact to a temperature of from 2100.degree. C. to 2500.degree. C. in a non-reactive atmosphere. The materials are high performance materials finding use in reinforcing, high temperature thermal insulating, improvement of thermal shock resistance, and modification of electrical properties.

REFERENCES:
patent: 4756895 (1988-07-01), Boecker et al.
Bootsma et al. "Phase Transformations, Habit Changes and Crystal Growth in SiC", Journal of Crystal Growth 8 (1971), pp. 341-353.
De-Coppi et al. "Phase Transformations and Grain Growth in Silicon Carbide Powders", Int. Journal of High Technology Ceramics 2(1986), pp. 99-113.

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