Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2006-04-25
2006-04-25
Potter, Roy (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
C117S101000, C117S105000
Reexamination Certificate
active
07033858
ABSTRACT:
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.
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Chai Bruce H. T.
Gallagher John Joseph
Hill David Wayne
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Crystal Photonics, Incorporated
Potter Roy
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