Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-01-30
2007-01-30
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S094000, C117S101000, C117S105000
Reexamination Certificate
active
10396986
ABSTRACT:
A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107cm−2.
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Chou Mitch M. C.
Gallagher John Joseph
Hill David W.
Maruska Herbert Paul
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Crystal Photonics, Incorporated
Hiteshew Felisa
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