Method for making field oxide region with self-aligned channel s

Details Method for making field oxide region with self-aligned channel s Method for making field oxide region with self-aligned channel s

1986-04-01

1987-07-28

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29576B, 29577C, 29571, 148DIG85, 148DIG70, 357 49, 357 52, H01L 2176, H01L 2194, H01L, H01L

Patent

active

046824081

ABSTRACT:
A process is described for forming semiconductor device which include forming step of coating of silicon oxide derivative before ion implanting step: The coating prevents unnecessary extention of channel stop regions thus produces high speed and high current drive ability of produced semiconductor device.

REFERENCES:
patent: 3891469 (1975-06-01), Moriyama et al.
patent: 4502208 (1985-03-01), McPherson
patent: 4570325 (1986-02-01), Higuchi

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