Method for making field-effect transistor using carbon nanotube

Details Method for making field-effect transistor using carbon nanotube Method for making field-effect transistor using carbon nanotube

2005-07-20

2009-10-13

Johnson, Edward M (Department: 1793)

Chemistry of inorganic compounds

Carbon or compound thereof

Elemental carbon

C257S020000

Reexamination Certificate

active

07601322

ABSTRACT:
Carbon nanotube, method for positioning the same, field effect transistor made using the carbon nanotube, method for making the field-effect transistor, and a semiconductor device are provided. The carbon nanotube includes a bare carbon nanotube and a functional group introduced to at least one end of the bare carbon nanotube.

REFERENCES:
patent: 6706566 (2004-03-01), Avouris et al.
patent: 6798000 (2004-09-01), Luyken et al.
Tans, S.J. et al., “Room-temperature transistor based on a single carbon nanotube,” Nature, May 1998, vol. 393, pp. 49-52.
Bachtold, A. et al., “Logic Circuits with Carbon Nanotube Transistors,” Science, Nov. 2001, vol. 294, pp. 1317-1320.
Martel, R. et al., “Single- and multi-wall carbon nanotube field-effect transistors,” Applied Physics Letters, Oct. 1998, vol. 73, No. 17, pp. 2447-2449.
Wind, S.J. et al., “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes,” Applied Physics Letters, May 2002, vol. 80, No. 20, pp. 3817-3819.
Tseng, Y. et al., “Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology,” Nano Letters, 2004, vol. 1, No. 1, pp. 123-127.
Durkop, T. et al., “Extraordinary Mobility in Semiconducting Carbon Nanotubes,” Nano Letters, 2004, vol. 4, No. 1, pp. 35-39.
Fan S. et al., “Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties,” Science, Jan. 1999, vol. 283, pp. 512-514.
Murakami Y. et al., “Growth of vertically aligned single-walled carbon nanotube films on quartz substrates and their optical anisotropy,” Chemical Physics Letters, 2004, vol. 385, pp. 298-303.
Javey et al., “Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators,” Nano Letters, vol. 2, 2002, pp. 929-932.
Javey et al., “Ballistic carbon nanotube field-effect transistors,” Nature, vol. 424, Aug. 2003, pp. 654-657.

Affiliated with

Also associated with

Rating

Method for making field-effect transistor using carbon nanotube does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making field-effect transistor using carbon nanotube, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making field-effect transistor using carbon nanotube will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4081421