Method for making field effect devices with ultra-short gates

Details Method for making field effect devices with ultra-short gates Method for making field effect devices with ultra-short gates

1991-08-15

1993-06-15

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG53, 257 20, 257 24, 257194, H01L 21265

Patent

active

052197727

ABSTRACT:
The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a substrate by thin film deposition so that the length dimension of the gate is perpendicular to a major surface of the substrate. An edge of the gate-containing substrate is exposed, and the structure comprising the source, drain and channel is grown on the edge. Using this approach, field effect devices with precisely controlled gate lengths of less than 100 angstroms are achievable. Moreover the active regions of the device can be immersed within semiconductor material so that surface properties do not deteriorate device performance.

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Hartstein, et al., "A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length", J. Appl. Phys. 68 (Sep. 1, 1990).
Stormer et al., "Atomically precise superlattice potential imposed on a two-dimensional electron gas", 58 Appl. Phys. Lett. 7 (Feb. 18, 1991).
Hartstein, "Quantum Interference in an Ultra-Short Channel Si Mosfet", The Physics of Semiconductors, vol. 2 (Aug. 1990), pp. 1689-1692.

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