Method for making FET having reduced oxidation inductive stackin

Details Method for making FET having reduced oxidation inductive stackin Method for making FET having reduced oxidation inductive stackin

1995-03-24

1997-10-14

Niebling, John

Fishing, trapping, and vermin destroying

437 34, 437 41, 437 56, H01L 21265

Patent

active

056772084

ABSTRACT:
An improved manufacturing method for a semiconductor device, which can reduce process inductive fault such as oxidation inductive stacking fault (OSF) and contribute to the improvement of the electric characteristics of the semiconductor device, is disclosed. A thermal oxide film is formed on a semiconductor substrate, then a nitride film is formed and a medium temperature heat treatment is provided to the semiconductor substrate within a temperature range from 600.degree. C. to 1,000.degree. C., whereby an interstitial oxygen concentration can be lowered. Subsequently, ion implantation, etc. are provided as a well region forming process, and a drive-in process is performed by means of a high temperature heat treatment. At this time, ion implantation dose is set to 9.times.10.sup.13 or the duration of the teat treatment is shortened. After this, an element separation layer process is performed, and a gate oxide film, a gate electrode, a source/drain layer, a CVD oxide film, a contact hole and a metal wire are formed.

REFERENCES:
patent: 5002902 (1991-03-01), Watanabe
patent: 5091332 (1992-02-01), Bohr et al.
patent: 5096839 (1992-03-01), Amai et al.
patent: 5252510 (1993-10-01), Lee et al.
patent: 5300797 (1994-04-01), Bryant et al.
patent: 5304510 (1994-04-01), Suguro et al.
VLSI Manufacturing Technology article in Japanese (Jan. 14, 198, pp. 61-63) and partial translation.
Oxygen Precipitation and OSF article in Japanese and partial translation.

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