Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Mesa or stacked emitter
Reexamination Certificate
2006-01-17
2006-01-17
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Mesa or stacked emitter
C438S307000
Reexamination Certificate
active
06987052
ABSTRACT:
A method of forming a semiconductor structure in a semiconductor wafer includes the steps of forming an epitaxial layer on at least a portion of a semiconductor substrate of a first conductivity type and forming at least one trench through the epitaxial layer to at least partially expose the substrate. The method further includes doping at least one or more sidewalls of the at least one trench with an impurity of a known concentration level. The at least one trench is then substantially filled with a filler material. In this manner, a low-resistance electrical path is formed between an upper surface of the epitaxial layer and the substrate.
REFERENCES:
patent: 5856700 (1999-01-01), Woodbury
patent: 6333234 (2001-12-01), Liu
patent: 6482714 (2002-11-01), Hieda et al.
patent: 6828628 (2004-12-01), Hergenrother et al.
Baiocchi Frank A.
Desko John Charles
Jones Bailey R.
Lian Sean
Agere Systems Inc.
Nelms David
Nguyen Thinh T
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