Method for making electrical contacts

Details Method for making electrical contacts Method for making electrical contacts

1991-04-03

1992-12-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437198, 437199, 437246, 437247, H01L 2144

Patent

active

051751259

ABSTRACT:
The method of forming a highly conductive electrical contact to a semiconductor region of an integrated circuits device is described. An opening to the semiconductor region is provided through an insulating layer. A thin first layer of aluminium having a first grain size is sputter deposited over and in the opening covering the surface of the semiconductor region. A second layer of aluminium having a second and substantially different grain size from the thin first layer of aluminium is sputter deposited thereover. The resulting aluminum structure is subjected in its normal process of manufacture to temperature cycling of greater than about 300.degree. C. whereby any formed silicon nodules are preferentially formed at the boundary of the thin first layer of aluminium and the second layer of aluminium. The second layer of aluminium may in one alternative completely fill the opening. In another alternative, a third layer having substantially the same grain size as the first aluminum. In this last alternative, the third layer will fill the opening to complete the electrical contact. The grain size is adjusted by the bias applied or not applied during the sputter deposition.

REFERENCES:
patent: 3848330 (1974-11-01), Hall et al.
patent: 3856647 (1974-12-01), Blachman
patent: 4373966 (1983-02-01), Kim
patent: 4393096 (1983-07-01), Gajda
patent: 4495221 (1985-01-01), Broadbent
patent: 4923526 (1990-05-01), Harada et al.
patent: 4927783 (1990-05-01), Arai et al.
Pramanik et al., "VLSI Metallization Using Aluminum and its Alloys", Solid State Technology, pp. 131-138, Mar. 1983.

Affiliated with

Also associated with

Rating

Method for making electrical contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making electrical contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making electrical contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1886879