Method for making DRAM capacitor strap

Details Method for making DRAM capacitor strap Method for making DRAM capacitor strap

1998-08-19

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

H01L 2120

Patent

active

061107921

ABSTRACT:
A method of forming a trench capacitor comprises steps of forming a trench in a substrate, partially filling the trench with a first conductive material, lining a portion of the trench above the first conductive material with a collar material, etching the collar material to a strap depth below a top of the trench, and filling the trench with a second conductive material, wherein a portion of the second conductive material positioned between the strap depth and the top of the trench comprises a buried strap.

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Kenney, "Spacer-Defined Strap", IBM Technical Disclosure Bulletin, vol. 32, No. 4B, Sep. 1989, pp. 321-322.

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