Method for making doped well and field regions on semiconductor

Details Method for making doped well and field regions on semiconductor Method for making doped well and field regions on semiconductor

1995-07-26

1996-06-11

Dang, Trung

Fishing, trapping, and vermin destroying

437 69, 437 28, 437931, 437 26, 148DIG70, H01L 2176

Patent

active

055255353

ABSTRACT:
A method of forming doped well regions for FETs and doped field regions for channel stops to prevent surface inversion under the field oxide was achieved using a single ion implantation. The method involves forming a patterned silicon oxide layer over the field regions by selective deposition using liquid phase deposition (LPD) and a patterned photoresist mask. An ion implantation through the thick LPD silicon oxide layer over the field regions and through a thinner silicon nitride layer over the well regions resulted in a shallow doped field region and a deep doped well region. After removing the LPD oxide in HF, LOCOS was used to form the field oxide drive-in the dopant and anneal out the implant damage. After removing the silicon nitride layer over the well regions, gate oxides, polysilicon gate electrodes, and source/drains areas are formed to complete the FETs. The LPD process resulted in a doped field region self-aligned to a doped well region that required fewer masking and implant steps. The method is applicable to the fabrication of N and P-FETs for CMOS circuits.

REFERENCES:
patent: 4277291 (1981-07-01), Cerofolini et al.
patent: 4459741 (1984-07-01), Schwabe et al.
patent: 4574467 (1986-03-01), Halfacre et al.
patent: 4987093 (1991-01-01), Teng et al.
patent: 5256593 (1993-10-01), Iwai
patent: 5429956 (1995-07-01), Shell et al.
patent: 5453395 (1995-09-01), Lur

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