Method for making doped antifuse structures

Details Method for making doped antifuse structures Method for making doped antifuse structures

1996-08-20

1999-05-04

Niebling, John F.

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

438600, 438467, H01L 2182

Patent

active

058997075

ABSTRACT:
An antifuse structure and method for making the antifuse structure having a doped antifuse layer is disclosed. The doped antifuse layer is preferably deposited over a lower electrode. A barrier layer may then be formed over the doped antifuse layer and an upper electrode may subsequently be deposited over the barrier layer. The method of depositing the doped antifuse layer includes: (a) providing a chemical vapor deposition reactor having a support chuck for supporting a partially fabricated silicon wafer; (b) powering up the chemical vapor deposition reactor and heating the partially fabricated silicon wafer; (c) selecting a dopant species for the antifuse layer (e.g, n-type or p-type); (d) introducing a gaseous mixture of a silane compound and the selected dopant species into the chemical vapor deposition reactor with the aid of a neutral species; and (e) depositing the antifuse layer over the lower electrode. When the antifuse structure is programmed, a wider conduction path is formed in the doped antifuse layer and deprogrammed states are prevented.

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