Method for making defect-free zone by laser-annealing of doped s

Details Method for making defect-free zone by laser-annealing of doped s Method for making defect-free zone by laser-annealing of doped s

1978-09-26

1980-01-01

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 219121L, 357 91, H01L 2126, H01L 21268

Patent

active

041815386

ABSTRACT:
This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

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