Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-03-14
2009-08-18
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S094000, C257S096000, C257SE21108
Reexamination Certificate
active
07575946
ABSTRACT:
In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a predetermined distribution of lattice mismatch ratios in the thickness direction so as to reduce strain; and a second epitaxial growth step of forming the compound semiconductor layer on the buffer layer. The first epitaxial growth step is carried out by metal organic chemical vapor deposition at a deposition temperature of 600° C. or less.
REFERENCES:
patent: 4451691 (1984-05-01), Fraas
patent: 5134446 (1992-07-01), Inoue
patent: 5633516 (1997-05-01), Mishima et al.
patent: 5751753 (1998-05-01), Uchida
patent: 6429103 (2002-08-01), Johnson et al.
patent: 04-372120 (1992-12-01), None
patent: 2000-319100 (2000-11-01), None
patent: 2002-373999 (2002-12-01), None
patent: 2003-124454 (2003-04-01), None
Chen et al., “Use of tertiarybutylarsine for GaAs growth”, Jan. 26, 1987, Appli. Phys. Lett. 50 (4) pp. 218-220.
Chen et al., “Use of tertiarybutylarsine for GaAs growth”, Applied Physics Letters 50 (4), Jan. 26, 1987, pp. 218-220.
Hino Tomonori
Narui Hironobu
Sato Yasuo
Coleman W. David
McCall Shepard Sonya D
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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