Method for making complementary MOS semiconductor devices

Details Method for making complementary MOS semiconductor devices Method for making complementary MOS semiconductor devices

1983-10-20

1985-04-02

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 29580, 148187, H01L 21265

Patent

active

045078467

ABSTRACT:
Gate electrodes for respective n channel and p channel transistors are disposed on a semiconductive layer over an oxide layer. A portion of the semiconductive layer existing between the gate electrodes is removed so that the thickness of the semiconductive layer between the gate electrodes is less than that of the semiconductive layer under the gate electrode.

REFERENCES:
patent: 3933529 (1976-01-01), Goser
patent: 4002501 (1977-01-01), Tamura
patent: 4097314 (1978-06-01), Schlesier et al.
patent: 4217153 (1980-08-01), Fukunaga et al.
patent: 4277883 (1981-07-01), Kaplan
patent: 4280272 (1981-07-01), Egawa et al.
patent: 4335504 (1982-06-01), Lee
patent: 4385937 (1983-05-01), Ohmura
patent: 4399605 (1983-08-01), Dash et al.

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