Method for making collector up bipolar transistors having reduci

Details Method for making collector up bipolar transistors having reduci Method for making collector up bipolar transistors having reduci

1994-10-07

1995-07-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG10, 148DIG11, 148DIG51, 148DIG72, 257197, 257200, 257593, 437126, 437133, H01L 21265

Patent

active

054340918

ABSTRACT:
This is a method of fabricating a bipolar transistor on a wafer. The method can comprise: forming a doped emitter contact layer 31 on a substrate 30; forming a doped emitter layer 32 on top of the emitter contact layer, the emitter layer doped same conductivity type as the emitter contact layer; forming a doped base epilayer 34 on top of the emitter layer, the base epilayer doped conductivity type opposite of the emitter layer; forming a doped collector epilayer 36, the collector epilayer doped conductivity type opposite of the base layer to form the bipolar transistor; forming an collector contact 38 on top of the collector layer; forming a base contact 40 on top of the base layer; forming a emitter contact 44 on top of the emitter contact layer; and selective etching the emitter layer to produce an undercut 45 beneath the base layer.

REFERENCES:
patent: 4389831 (1989-12-01), Ishii et al.
patent: 4967252 (1990-10-01), Awano
patent: 5024958 (1991-06-01), Awano
patent: 5106766 (1992-04-01), Lunardi
patent: 5124270 (1992-06-01), Morizuka
patent: 5166081 (1992-11-01), Inada et al.
patent: 5168071 (1992-12-01), Fullowan et al.
patent: 5171697 (1992-12-01), Liu
patent: 5252500 (1993-10-01), Sato
patent: 5266819 (1993-11-01), Chang et al.
patent: 5298439 (1994-03-01), Liu et al.
patent: 5318916 (1994-06-01), Enquist et al.
patent: 5321302 (1994-06-01), Shimawaki
Analysis of the Emitter-Down Configuration of Double-Heterojunction Bipolar Transistor, Q. M. Zhang, et al. IEEE Transactions on Electron Devices, vol. 39, No. 10, Oct. 1992, pp. 2220-2228.

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