Method for making closely-spaced VCSEL and photodetector on a su

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438 33, 438 45, 438 46, 438423, 257 84, 372 50, 372 56, 148DIG95, 148DIG128, H01L 2100

Patent

active

060016647

ABSTRACT:
A monolthically integrated VCSEL and photodetector, and a method of manufacturing same, are disclosed for applications where the VCSEL and photodetector require separate operation such as duplex serial data communications applications. A first embodiment integrates a VCSEL with an MSM photodetector on a semi-insulating substrate. A second embodiment builds the layers of a p-i-n photodiode on top of layers forming a VCSEL using a standard VCSEL process. The p-i-n layers are etched away in areas where VCSELs are to be formed and left where the photodetectors are to be formed. The VCSELs underlying the photodetectors are inoperable, and serve to recirculate photons back into the photodetector not initially absorbed. The transmit and receive pairs are packaged in a single package for interface to multifiber ferrules. The distance between the devices is precisely defined photolithographically, thereby making alignment easier.

REFERENCES:
patent: 3859178 (1975-01-01), Logan et al.
patent: 5019519 (1991-05-01), Tanaka et al.
patent: 5132982 (1992-07-01), Chan et al.
patent: 5147827 (1992-09-01), Chino et al.
patent: 5285466 (1994-02-01), Tabatabaie
patent: 5288659 (1994-02-01), Koch et al.
patent: 5292685 (1994-03-01), Inoguchi et al.
patent: 5331658 (1994-07-01), Shieh et al.
patent: 5419804 (1995-05-01), Ojha et al.
patent: 5491712 (1996-02-01), Lin et al.
patent: 5543353 (1996-08-01), Suzuki et al.
patent: 5577064 (1996-11-01), Swirhun et al.
patent: 5606572 (1997-02-01), Swirhun et al.
patent: 5726440 (1998-03-01), Kalkhoran et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for making closely-spaced VCSEL and photodetector on a su does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making closely-spaced VCSEL and photodetector on a su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making closely-spaced VCSEL and photodetector on a su will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-862547

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.