Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1996-04-12
1999-11-16
Fahmy, Wael M.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 29, 438 33, 438 68, 438455, 438458, 438459, 438967, 438977, 438464, 438 93, 438 94, H01L 2100
Patent
active
059856874
ABSTRACT:
Optically flat cleaved facet mirrors are fabricated in GaN epitaxial films grown on sapphire by wafer fusing a GaN film with a sapphire substrate to a cubic substrate such as an InP or GaAs substrate. The sapphire substrate may then partially or entirely removed by lapping, dry etching, or wet etching away a sacrificial layer disposed in the interface between the sapphire substrate and the GaN layer. Thereafter, the cubic InP or GaN substrate is cleaved to produce the cubic crystal facet parallel to the GaN layer in which active devices are fabricated for use in lasers, photodetectors, light emitting diodes and other optoelectronic devices.
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Bowers John E.
DenBaars Steven P.
Sink R. Kehl
Dawes Daniel L.
Fahmy Wael M.
Pham Long
The Regents of the University of California
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