Method for making charge coupled device with all electrodes of t

Details Method for making charge coupled device with all electrodes of t Method for making charge coupled device with all electrodes of t

1997-04-24

1999-04-06

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

H01L 2100

Patent

active

058917527

ABSTRACT:
A method and apparatus of manufacturing an array of closely spaced electrodes wherein a semiconductor surface having a plurality cells that are capable of storing charge is fabricated such that there are a plurality of closely spaced electrodes associated with the cells and placing insulation regions between the closely spaced electrodes. The insulating regions are preferably made out of silicon dioxide and the material to form the electrodes is selected as one that is not oxidizable to silicon dioxide. The preferred embodiment uses an electrode material indium tin oxide. A barrier region is provided to assist charge transfer in the preferred embodiment the barrier region is preferably edge aligned to one of the electrodes.

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S.L. Kosman et al., "A Large Area 1.3 Metgapixel Full-FrameCCD Image Sensor With A Lateral-Overflow Drain And A Transparent Gate Electrode", 1990 IEEE, pp. 287-290.
W.F. Keenan and D.C. Harrison, "A Tin Oxide Trnasparent-Gate Buried-Channel Virtual-Phase CCD Imager", 1985 IEEE, pp. 1531-1533.

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