Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-07-01
1987-02-17
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29576E, 357 24, 357 51, H01L 21263
Patent
active
046428771
ABSTRACT:
A charge transfer device (CTD)/complementary metal oxide semiconductor (CMOS) process for the production of a signal processing apparatus is disclosed. The process consists of selectively combining virtual phase CCD process technology with CMOS technology to provide high density signal processing utilizing small (3 micron) geometries, sized P and N MOS (CMOS) transistors, and high valued (0.8 picofarad) poly-poly capacitors. The process is a single and efficient (14-16 photomasks) fabrication process starting with a single layer of P+ silicon as a substrate supporting an epitaxial layer of P silicon as the active area. An N well is formed in the epitaxial surface for a P-channel MOSFET, then using a patterned moat and positive and negative resists boron is ion implanted to form channel separators between N and P channel transistors, and P+ isolation regions and channel stops for the CCDs. A first layer of poly silicon is deposited for a stacked capacitor and covered with oxide and nitride layers, and boron implants made to adjust the thresholds of N and P channels transistors and then buried channels for the CCDs are ion implanted. Then N-material is ion implanted to form clock wells. Next, a second level poly silicon layer is deposited and etched to form transistor gates; and CCD clock gates. Then N+ and P+ source and drain regions are formed to complete the CMOS circuitry. Then a N-virtual well is formed by ion implanting N-type material and the virtual phase region, barrier and well is deepended by another P-material implant. Finally, aluminum contacts for the CCDs, CMOS and poly-poly capacitors are formed.
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RCA Review, vol. 36, Sep. 1975, pp. 567-593, "Basic Concepts of Charge-Coupled Devices", Kosohocky et al.
Garner Ricky B.
Payne Thomas H.
Tranjan Farid M.
Hearn Brian E.
Heiting Leo N.
Quach T.
Robinson Richard K.
Sharp Melvin
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