Method for making buried isolation

Details Method for making buried isolation Method for making buried isolation

1991-12-23

1992-12-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 59, 437 75, 437156, H01L 21265, H01L 2970, H01L 2170

Patent

active

051751178

ABSTRACT:
A method for making bipolar transistors with a first and a second buried collectors that are separated wherein the first and second buried collectors are separated by a p buried layer that is made by depositing a heavily doped boron layer and subsequently diffusing boron from the boron layer into the area between the first and second buried collector.

REFERENCES:
patent: 3667006 (1972-05-01), Ruegg
patent: 3713908 (1973-01-01), Agasta et al.
patent: 3891480 (1975-06-01), Fulkerson
patent: 4260999 (1981-04-01), Yoshioka
patent: 4357622 (1982-11-01), Magdo et al.
patent: 4377029 (1983-03-01), Ozdwa

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