Method for making borderless contacts

Details Method for making borderless contacts Method for making borderless contacts

1989-08-08

1990-10-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437241, 437240, H01L 21465

Patent

active

049668706

ABSTRACT:
A process for making borderless contacts through an insulating layer to active regions of a semiconductor device is disclosed. After deposition of a silicon nitride layer and an insulation glass layer on a substrate coating semiconductor devices, the contact windows are etched. The windows are etched through the glass layer with BCl.sub.2 or CHF.sub.3 /CF.sub.4 etch gases. Next, the windows are etched through the silicon nitride with CH.sub.3 F or O.sub.2 /CHF.sub.3 gases.

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Coburn, J., "Plasma Assisted Etching", Plasma Chem and Plasma Proc., vol. 2, No. 1, 1982, pp. 1-41.

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