Method for making bipolar transistors using rapid thermal anneal

Details Method for making bipolar transistors using rapid thermal anneal Method for making bipolar transistors using rapid thermal anneal

1986-09-08

1988-07-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437239, 437174, 437 31, 148DIG10, H01L 21324

Patent

active

047554878

ABSTRACT:
In making bipolar transistors, an interfacial oxide layer (5) is formed over ther monocrystalline region (1), and polysilicon (6) is formed both thereon as an extrinsic emitter region. After doping the polysilicon a monocrystalline emitter region (4) is produced in the base region by diffusion from the extrinsic polysilicon emitter region. The oxide layer (5) acts as a diffusion barrier to ensure that excessive dopant does not reach the monocrystalline region.
After the above operation, a thermal treatment is effected at a higher temperature, e.g. 1100.degree. C., for a few seconds, which breaks down the interfacial oxide layer referred to above. This temporary use of the interfacial oxide layer leads to better and more consistant transistor characteristics.

REFERENCES:
patent: 4181538 (1980-01-01), Narayan et al.
patent: 4523370 (1985-06-01), Sullivan et al.
Schaber et al., "Conduction Mechanisms of Polysilicon emitters with thin Interfacial Oxide Layers", in IEDM, 1984, pp. 738-741.
Hodgson et al., "RTA of Si Warp an Ultrahigh Power Arc Lamp", in Mat. Res. Soc. Symp. Proc., vol. 13 (1983), Elsevier Sci., pp. 355-360.
Narayan et al, "Flame annealing of Ion Implanted Silicon", in Mat. Res. Soc. Symp. Proc., vol. 13 (1983), Elsevier Sci., pp. 361-367.
Hill, C., "The Contribution of . . . ", in Mat. Res. Soc. Proc., vol. 13 (1983), Elsevier Sci., pp. 381-392.
Cuthbertson et al., "Self-Aligned Bipolar Transistors with Enhanced Efficiency Polysilicon Emitters", in 1984, IEDM, pp. 749-752.
Peterson, K., IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr. 1980, pp. 5053-5054.
Ning et al., IEEE Transactions on Electron Dervices, vol. ED-27, No. 11, Nov. 1980, pp. 2051-2055.

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