Method for making bipolar transistor having double polysilicon s

Details Method for making bipolar transistor having double polysilicon s Method for making bipolar transistor having double polysilicon s

1995-06-07

1996-07-30

Fourson, George

Fishing, trapping, and vermin destroying

437150, 437162, 437191, 437193, 437195, 437200, 148DIG11, 257518, 257554, 257588, 257592, H01L 21265

Patent

active

055411240

ABSTRACT:
A semiconductor device and a manufacturing method therefor which can simultaneously realize both a reduction in base transit time by a reduction in base width and a reduction in base resistance by a reduction in link base resistance. The semiconductor device is manufactured by the method including the steps of forming a first impurity diffused layer of a first conduction type in a semiconductor substrate; forming a conducting film connected to the first impurity diffused layer; forming a first insulating film on the conducting film; forming a first hole through a laminated film composed of the first insulating film and the conducting film; forming a second impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the first hole; forming a side wall from a second insulating film in the first hole to form a second hole; and forming a third impurity diffused layer of the first conduction type in the semiconductor substrate exposed to the second hole.

REFERENCES:
patent: 4994400 (1991-02-01), Yamaguchi et al.
patent: 4997775 (1991-03-01), Cook et al.
patent: 5024957 (1991-06-01), Harame et al.
patent: 5204277 (1993-04-01), Somero et al.
patent: 5213989 (1993-05-01), Fitch et al.
patent: 5391503 (1995-02-01), Miwa et al.
patent: 5403757 (1995-04-01), Suzuki

Affiliated with

Also associated with

Rating

Method for making bipolar transistor having double polysilicon s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making bipolar transistor having double polysilicon s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making bipolar transistor having double polysilicon s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1658153