Method for making bipolar transistor having a graft-base configu

Details Method for making bipolar transistor having a graft-base configu Method for making bipolar transistor having a graft-base configu

1985-02-20

1987-05-05

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 29576W, 148188, 148DIG151, 148DIG10, H01L 21225

Patent

active

046620621

ABSTRACT:
Manufacturing of a graft-base transistor is characterized by: first, forming a layer (8) of oxide of silicon with opening on an n-semiconductor layer (2), at a part to become a base region (3, 4, 3) (FIG. 2a)); then, forming a polycrystalline silicon layer (9) and an overriding silicon nitride layer (10) with an opening (11) thereon (FIG. 2(b)); selectively diffusing P or As to form an n-emitter region (5) (FIG. 2(c)); forming a second silicon oxide layers (12, 13) only on the emitter region (5) and on peripheral regions thereabout, and removing the polycrystalline layer (9) and the silicon nitride layer (10), (FIG. 2(d)) (FIG. 2(e)); and implanting B.sup.+ ions, thereby to form deeper and higher concentration base contact regions (3, 3) and shallower and lower concentration active base region (4).

REFERENCES:
patent: 3595716 (1971-07-01), Kerr et al.
patent: 3635772 (1972-01-01), Pestie et al.
patent: 3707410 (1972-12-01), Tauchi et al.
patent: 3717507 (1973-02-01), Abe
patent: 3756873 (1973-09-01), Kaiser
patent: 4124933 (1978-11-01), Nicholas
patent: 4512075 (1985-04-01), Voka
patent: 4536950 (1985-08-01), Sadamatsu et al.
New LSI Process Technology, Jul. 20, 1983, Kogyo Chosa Kai Publishing Company including English Translation.

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