Fishing – trapping – and vermin destroying
Patent
1992-04-28
1993-02-23
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 51, 437 60, 257515, 257516, 257535, H01L 21265, H01L 2970
Patent
active
051889722
ABSTRACT:
A semiconductor structure having a high precision analog polysilicon capacitor with a self-aligned extrinsic base region of a bipolar transistor is disclosed. The structure is formed by simultaneously forming the dielectric layer of the capacitor with the formation of the base region of the bipolar transistor. A final oxidation step in the formation of the capacitor causes the base region to diffuse to form a self-aligned extrinsic base diffusion region.
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S. Sze, VLSI Technology, pp. 504-506, (2nd Ed. McGraw-Hill) 1988.
W. Ko et al., IEEE Transaction on Electronics Devices, vol. ED-30, No. 3, entitled "A Simplified Fully Implanted Bipolar VLSI Technology", pp. 236-239 (Mar. 1983).
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Lui Sik K.
Shum Ying K.
Chaudhuri Olik
Pham Long
Sierra Semiconductor Corporation
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